16 citations · 42 across the 6 of their papers we have counts for
6 papers
A Backscattering Model Incorporating the Effective Carrier Temperature in Nano MOSFET
Gino Giusi, Giuseppe Iannaccone, Felice Crupi +1
In this work we propose a channel backscattering model in which increased carrier temperature at the top of the potential energy barrier in the channel is taken into account. This…
Criticisms on and Comparison of Experimental Channel Backscattering Extraction Methods
Gino Giusi, Felice Crupi, Paolo Magnone
In this paper we critically review and compare experimental methods, based on the Lundstrom model, to extract the channel backscattering ratio in nano MOSFETs. Basically two experi…
Barrier Lowering and Backscattering Extraction in Short-Channel MOSFETs
Gino Giusi, Giuseppe Iannaccone, Debrabata Maji +1
In this work we propose a fully experimental method to extract the barrier lowering in short-channel saturated MOSFETs using the Lundstrom backscattering transport model in a one s…
A microscopically accurate model of partially ballistic nanoMOSFETs in saturation based on channel backscattering
Gino Giusi, Giuseppe Iannaccone, Felice Crupi
We propose a model for partially ballistic MOSFETs and for channel backscattering that is alternative to the well known Lundstrom model and is more accurate from the point of view…
Transient Analysis of Warm Electron Injection Programming of Double Gate SONOS Memories by means of Full Band Monte Carlo Simulation
G. Giusi, G. Iannaccone, U. Ravaioli
In this paper we investigate "Warm Electron Injection" as a mechanism for NOR programming of double-gate SONOS memories through 2D full band Monte Carlo simulations. Warm electron…
Study of Warm Electron Injection in Double Gate SONOS by Full Band Monte Carlo Simulation
G. Giusi, G. Iannaccone, M. Mohamed +1
In this paper we investigate warm electron injection in a double gate SONOS memory by means of 2D full-band Monte Carlo simulations of the Boltzmann Transport Equation (BTE). Elect…