80 citations · 135 across the 7 of their papers we have counts for
7 papers
Device-area selection of memristive transport regimes in epitaxial -based ferroelectric devices
Priscila A. Tapia Presas, Lautaro Galarregui, Wilson Román Acevedo +5
Ferroelectric memristive devices based on hafnia are promising systems for neuromorphic electronics, yet the interplay between polarization-modulated resistive changes and defect-m…
On the origin of filamentary resistive switching in oxides-based memristive devices
R. Leal Martir, E. A. Jagla, D. Rubi +1
The control and manipulation of filamentary resistive switching (FRS) is essential for practical applications in fields like non-volatile memories and neuromorphic computing. Howev…
Memristive response and neuromorphic functionality of polycrystalline ferroelectric Ca:HfO-based devices
C. Ferreyra, M. Badillo, M. J. Sánchez +3
Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization…
Multi-mem behavior at reduced voltages in LaSrMnCoO perovskite modified with Sm:CeO
Wilson Román Acevedo, Myriam H. Aguirre, Beatriz Noheda +1
Neuromorphic computing aims to mimic the architecture and the information processing mechanisms of the mammalian brain, appearing as the only avenue that offers significant energy…
On the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices
C. Ferreyra, M. Rengifo, M. J. Sánchez +3
Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of…
Epitaxial TbMnO3 thin films on SrTiO3 substrates: A structural study
C. J. M. Daumont, D. Mannix, Sriram Venkatesan +5
TbMnO films have been grown under compressive strain on (001)-oriented SrTiO crystals. They have an orthorhombic structure and display the (001) orientation. With incre…