196 citations · 689 across the 9 of their papers we have counts for
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cond-mat.mtrl-sci2016★ 33 cited
An upper limit on the lateral vacancy diffusion length in diamond
J. O. Orwa, K. Ganesan, J. Newnham +9
Ion implantation is widely used to modify the structural, electrical and optical properties of materials. By appropriate masking, this technique can be used to define nano- and mic…
cond-mat.mtrl-sci2011★ 66 cited
Depletion of nitrogen-vacancy color centers in diamond via hydrogen passivation
A. Stacey, T. J. Karle, L. P. McGuinness +7
We show a marked reduction in the emission from nitrogen-vacancy (NV) color centers in single crystal diamond due to exposure of the diamond to hydrogen plasmas ranging from 700°C…