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cond-mat.mtrl-sci2018★ 3 cited
Non-volatile ferroelectric memory effect in ultrathin α-In2Se3
Siyuan Wan, Yue Li, Wei Li +8
Recent experiments on layered α-In2Se3 have confirmed its room-temperature ferroelectricity under ambient condition. This observation renders α-In2Se3 an excellent platform for dev…
cond-mat.mtrl-sci2018★ 65 cited
A switchable diode based on room-temperature two-dimensional ferroelectric α-In2Se3 thin layers
Siyuan Wan, Yue Li, Wei Li +3
Nanoscaled room-temperature ferroelectricity is ideal for developing advanced non-volatile high-density memories. However, reaching the thin film limit in conventional ferroelectri…