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Orthogonal electric control of the out-of-plane field-effect in two-dimensional ferroelectric alpha-In2Se3
Yue Li, Chen Chen, Wei Li +7
Tuning the electric properties of crystalline solids is at the heart of material science and electronics. Generating the electric field-effect via an external voltage is a clean, c…
Electronic Raman Scattering On Individual Single Walled Carbon Nanotubes
Xi Chen, Bairen Zhu, Anmin Zhang +3
We report experimental measurements of electronic Raman scattering under resonant conditions by electrons in individual single-walled carbon nanotubes (SWNTs). The inelastic Raman…
Anomalously Robust Valley Polarization and Valley Coherence in Bilayer WS2
Bairen Zhu, Hualing Zeng, Junfeng Dai +2
Coherence is a crucial requirement to realize quantum manipulation through light-matter interactions. Here we report the observation of anomalously robust valley polarization and v…
Low-Frequency Raman Modes and Electronic Excitations In Atomically Thin MoS2 Crystals
Hualing Zeng, Bairen Zhu, Kai Liu +3
Atomically thin MoS crystals have been recognized as a quasi-2D semiconductor with remarkable physics properties. This letter reports our Raman scattering measurements on mul…
Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides
Hualing Zeng, Gui-Bin Liu, Junfeng Dai +8
Motivated by the triumph and limitation of graphene for electronic applications, atomically thin layers of group VI transition metal dichalcogenides are attracting extensive intere…
Valley polarization in MoS2 monolayers by optical pumping
Hualing Zeng, Junfeng Dai, Wang Yao +2
We report experimental evidences on selective occupation of the degenerate valleys in MoS2 monolayers by circularly polarized optical pumping. Over 30% valley polarization has been…
Observation of Quantum Capacitance of individual single walled carbon nanotubes
Junfeng Dai, Jun Li, Hualing Zeng +1
We report a measurement on quantum capacitance of individual semiconducting and small band gap SWNTs. The observed quantum capacitance is remarkably smaller than that originating f…