activity
20082026
most citedDifference of Oxide Hetero-Structure Junctions with Semiconductor Electronic Devices

9 citations · 9 across the 5 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2026

Ultrafast Demagnetization Governed by Spin Fluctuations in CaRuO/SrTiO Superlattice

Yu-Han Gao, Wen-Xiao Shi, Yuan-Sha Chen +10

For ultrafast magnetization switching devices, critical slowing down in conventional ferromagnets near their Curie temperature constitutes a key challenge that must be overcome. In…

cond-mat.mes-hall2025

Light-Induced Giant Enhancement of the Nonlinear Hall Effect in Two-Dimensional Electron Gases at KTaO3 (111) Interfaces

Hui Zhang, Daming Tian, Xiaobing Chen +15

The nonlinear Hall effect (NLHE), an emergent phenomenon in noncentrosymmetric systems, enables the generation of a transverse voltage without an external magnetic field through a…

cond-mat.supr-con2025

Two-Dimensional Superconductivity at the CaZrO3/KTaO3 (001) Heterointerfaces

Lu Chen, Siyi Zhou, Daming Tian +10

Two-dimensional superconductivity at KTaO3 (KTO) heterointerfaces has sparked intensive investigations since its discovery, yet whether the (001)-oriented KTO interface hosts super…

cond-mat.mtrl-sci2025

Room-temperature magnetoelectric coupling in strontium titanate

Zhen Yang, Cheng Ma, Mengqin Wang +12

Magnetoelectric (ME) multiferroics enable efficient interconversion of electrical and magnetic signals, offering pathways toward substantial reduction of power consumption in next-…

cond-mat.mtrl-sci2025

Ferromagnetism in LaFeO3/LaNiO3 Superlattices with High Curie Temperature

Tianlin Zhou, Fei Gao, Qinghua Zhang +11

Interfacing complex oxides in atomically engineered layered structures can give rise to a wealth of exceptional electronic and magnetic properties that surpass those of the individ…

cond-mat.str-el2008★ 9 cited

Difference of Oxide Hetero-Structure Junctions with Semiconductor Electronic Devices

Guangcheng Xiong, Yuansha Chen, Liping Chen +1

Charge carrier injection performed in Pr0.7Ca0.3MnO3 (PCMO) hetero-structure junctions exhibits stable without electric fields and dramatic changes in both resistances and interfac…