832 citations · 6.3k across the 62 of their papers we have counts for
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Dual behavior of excess electrons in rutile TiO2
A. Janotti, C. Franchini, J. B. Varley +2
The behavior of electrons in the conduction band of TiO2 and other transition-metal oxides is key to the many applications of these materials. Experiments seem to produce conflicti…
Controlling the density of the 2DEG at the SrTiO3/LaAlO3 interface
A. Janotti, L. Bjaalie, L. Gordon +1
The polar discontinuity at the SrTiO3/LaAlO3 interface (STO/LAO) can in principle sustain an electron density of 3.3E14 cm-2 (0.5 electrons per unit cell). However, experimentally…
Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well
M. S. Miao, Q. Yan, C. G. Van de Walle +3
Topological insulator (TI) states have been demonstrated in materials with narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can al…
Phonon-assisted optical absorption in silicon from first principles
Jesse Noffsinger, Emmanouil Kioupakis, Chris G. Van de Walle +2
The phonon-assisted interband optical absorption spectrum of silicon is calculated at the quasiparticle level entirely from first principles. We make use of the Wannier interpolati…
Measurement and Control of Single Nitrogen-Vacancy Center Spins above 600 K
D. M. Toyli, D. J. Christle, A. Alkauskas +3
We study the spin and orbital dynamics of single nitrogen-vacancy (NV) centers in diamond between room temperature and 700 K. We find that the ability to optically address and cohe…