762 citations · 811 across the 8 of their papers we have counts for
9 papers
Optoelectronically Active GaAs/GeSn-MQW/Ge Heterojunctions Created via Semiconductor Grafting
Jie Zhou, Haibo Wang, Yifu Guo +19
Traditionally, advancements in semiconductor devices have been driven by lattice-matched heterojunctions with tailored band alignments through heteroepitaxy techniques. However, th…
Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K
Jie Zhou, Daniel Vincent, Sudip Acharya +16
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been b…
Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
Yang Liu, Jiarui Gong, Sudip Acharya +12
GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequa…
AlGaAs/GeSn p-i-n diode interfaced with ultrathin AlO
Yang Liu, Yiran Li, Sudip Acharya +9
This study presents the fabrication and characterizations of an AlGaAs/GeSn/GeSn p-i-n double heterostructure (DHS) diode following the grafting a…
Investigation of the Imperfect Interface at the Si/GaAs Heterojunction Formed by Ultra-Thin Oxide Interfacial Layer
Md Nazmul Hasan, Yixiong Zheng, Junyu Lai +6
The structure property of non-ideal Si/GaAs heterostructures that were integrated with the ultra-thin oxide (UO) tunneling interfacial layer has been systematically investigated. S…
Electrical and Thermal Property of Si/GaAs Heterojunction Formed by Ultra-Thin Oxide Interfacial Layer
Md Nazmul Hasan, Yixiong Zheng, Junyu Lai +6
We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray phot…
Lattice-mismatched semiconductor heterostructures
Dong Liu, Sang June Cho, Jung-Hun Seo +19
Semiconductor heterostructure is a critical building block for modern semiconductor devices. However, forming semiconductor heterostructures of lattice-mismatch has been a great ch…
Anomalous modulation of a zero bias peak in a hybrid nanowire-superconductor device
A. D. K. Finck, D. J. Van Harlingen, P. K. Mohseni +2
We report on sub-gap transport measurements of an InAs nanowire coupled to niobium nitride leads at high magnetic fields. We observe a zero-bias anomaly (ZBA) in the differential c…
Growth and characterization of GaAs nanowires on carbon nanotubes composite films: toward flexible nanodevices
P. K. Mohseni, G. Lawson, C. Couteau +3
Poly(ethylene imine) functionalized carbon nanotube thin films, prepared using the vacuum filtration method, were decorated with Au nanoparticles by in situ reduction of HAuCl4 und…