activity
20062014
most citedEfficient and mode selective spatial mode multiplexer based on Multi-Plane Light Conversion

477 citations · 975 across the 6 of their papers we have counts for

collaborators

6 papers

physics.optics2014★ 477 cited

Efficient and mode selective spatial mode multiplexer based on Multi-Plane Light Conversion

Guillaume Labroille, Bertrand Denolle, Pu Jian +3

We designed and built a new type of spatial mode multiplexer, based on Multi-Plane Light Conversion (MPLC), with very low intrinsic loss and high mode selectivity. In this first de…

quant-ph2012★ 1 cited

Asymmetric EPR entanglement in continuous variable systems

Katherine Wagner, Jiri Janousek, Seiji Armstrong +3

Continuous variable entanglement can be produced in nonlinear systems or via interference of squeezed states. In many of optical systems, such as parametric down conversion or inte…

quant-ph2012★ 188 cited

Programmable Multimode Quantum Networks

Seiji Armstrong, Jean-Francois Morizur, Jiri Janousek +4

Entanglement between large numbers of quantum modes is the quintessential resource for future technologies such as the quantum internet. Conventionally the generation of multimode…

physics.optics2010★ 293 cited

Programmable unitary spatial modes manipulation

J-F. Morizur, Lachlan Nicholls, Pu Jian +7

Free space propagation and conventional optical systems such as lenses and mirrors all perform spatial unitary transforms. However, the subset of transforms available through these…

quant-ph2008★ 1 cited

Spatial multimode entanglement within one laser beam

J. Janousek, K. Wagner, J-F. Morizur +4

Optical entanglement is a key requirement for many quantum communication protocols. Conventionally entanglement is formed between two distinct beams, with the quantum correlations…

cond-mat.other2006★ 15 cited

Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors

Yukinori Ono, Jean-Francois Morizur, Katsuhiko Nishiguchi +6

We investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. In a range of doping concentrat…