701 citations · 2.5k across the 11 of their papers we have counts for
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A comparative study of SiC epitaxial growth in vertical hotwall CVD reactor using silane and dichlorosilane precursor gases
Tawhid Rana, MVS Chandrashekhar, Haizheng Song +1
SiC epitaxial films grown in an inverted chimney CVD reactor are analyzed and compared for growth rates, doping concentration and surface morphology using silane-propane-hydrogen a…
Study of epitaxial graphene on non-polar 6H-SiC faces
B. K. Daas, K. Daniels, S. Shetu +2
We present epitaxial graphene (EG) growth on non-polar a-plane and m-plane 6H-SiC faces where material characterization is compared with that known for EG grown on polar faces. Ato…
Doping Dependence of Thermal Oxidation on n-type 4H-SiC
B. K. Daas, M. M. Islam, I. A. Chowdhury +3
The doping dependence of dry thermal oxidation rates in n-type 4H-SiC was investigated. The oxidation was performed in the temperature range 1000C to 1200C for samples with nitroge…
Emission of Terahertz Radiation from SiC
Jared H. Strait, Paul A. George, Jahan Dawlaty +4
We report the emission of strong coherent broadband terahertz radiation from 6H-Silicon-Carbide (SiC) excited with optical pulses. The measured terahertz spectral signal-to-noise r…
Measurement of the Optical Absorption Spectra of Epitaxial Graphene from Terahertz to Visible
Jahan M. Dawlaty, Shriram Shivaraman, Jared Strait +6
We present experimental results on the optical absorption spectra of epitaxial graphene from the visible to the terahertz (THz) frequency range. In the THz range, the absorption is…
Measurement of Ultrafast Carrier Dynamics in Epitaxial Graphene
Jahan M. Dawlaty, Shriram Shivaraman, Mvs Chandrashekhar +2
Using ultrafast optical pump-probe spectroscopy, we have measured carrier relaxation times in epitaxial graphene layers grown on SiC wafers. We find two distinct time scales associ…