most citedLateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas

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cond-mat.mtrl-sci2024

Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing

Oliver Steuer, Daniel Schwarz, Michael Oehme +10

Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability…