4 citations · 7 across the 8 of their papers we have counts for
8 papers
Symmetry Breaking by Interfacial Dead Layers: Observation of Forbidden Self-Induced Spin-Orbit Torque in Symmetric Ferromagnets
Athira Ravindran K, Raghvendra Posti, Manish Kumar Mohanta +8
Conventionally, spin-orbit torques (SOTs) in ferromagnets require heavy-metal layers or engineered structural asymmetry to break inversion symmetry. In this work, we report the obs…
Element-Specific Visualization of Layer-Parity and Twist-Dependent Magnetism in CrSBr
Aalok Tiwari, Shubhada Patil, Ravi Kumar Bandapelli +16
Van der Waals (vdW) based antiferromagnets (AFMs) are an ideal platform for probing and understanding thickness- and twist-angle-dependent emergent spin phenomena. However, element…
Enabling Electrical Readout of Néel vector reversal in a van der Waals Antiferromagnet
Raghvendra Posti, Ravi Kumar Bandepalli, Wenhao Liu +14
Owing to its robustness against external perturbations and intrinsically ultrafast dynamics, the Néel vector in antiferromagnets (AFMs) can enable the development of next-generatio…
Reconfigurable Spin Logics and High-density Multistate Memory in a Single Spin-orbit Torque Device
Raghvendra Posti, Dhanajay Tiwari, Debangsu Roy
Nonvolatile devices based on the spin-orbit torque (SOT) mechanism are highly suitable for in-memory logic operations. The current objective is to enhance the memory density of mem…
Correlation of Magnetic State Configurations in Nanotubes with FMR spectrum
Abhishek Kumar, Chirag Kalouni, Raghvendra Posti +3
Magnetic nanotubes have garnered immense attention for their potential in high-density magnetic memory, owing to their stable flux closure configuration and fast, reproducible reve…
Initialization-Free Multistate Memristor: Synergy of Spin-Orbit Torque and Magnetic Fields
Raghvendra Posti, Chirag Kalouni, Dhananjay K Tiwari +1
Spin-orbit torque (SOT)-based perpendicularly magnetized memory devices with multistate memory have garnered significant interest due to their applicability in low-power in-memory…
Odd symmetry planar Hall effect: A method of detecting current-induced in-plane magnetization switching
Raghvendra Posti, Abhishek Kumar, Mayank Baghoria +3
Type-x device attracts considerable interest in the field of spintronics due to its robust spin-orbit torque (SOT) induced magnetization switching, and easy deposition technique. H…
Detection of field-free magnetization switching through thermoelectric effect in Ta/Pt/Co/Pt with significant spin-orbit torque and competing spin currents
Raghvendra Posti, Abhishek Kumar, Dhananjay Tiwari +1
Application of sufficient lateral current to a heavy metal (HM) can switch the perpendicular magnetization orientation of adjacent ferromagnetic layer (FM) through spin-orbit torqu…