activity
20082022
most citedMoving towards nano-TCAD through multimillion atom quantum dot simulations matching experimental data

54 citations · 157 across the 11 of their papers we have counts for

collaborators

11 papers

quant-ph2022★ 10 cited

Devitalizing noise-driven instability of entangling logic in silicon devices with bias controls

Hoon Ryu, Ji-Hoon Kang

The quality of quantum bits (qubits) in silicon is highly vulnerable to charge noise that is omni-present in semiconductor devices and is in principle hard to be suppressed. For a…

quant-ph2022

Exploring entanglement resource in Si quantum dot systems with operational quasiprobability approach

Junghee Ryu, Hoon Ryu

We characterize the quantum entanglement of the realistic two-qubit signals that are sensitive to charge noises. Our working example is the time response generated from a silicon d…

cond-mat.mes-hall2014

Numerical guidelines for setting up a general purpose k.p simulator with applications to quantum dot heterostructures and topological insulators

Parijat Sengupta, Hoon Ryu, Sunhee Lee +2

The k.p perturbation method for determination of electronic structure first pioneered by Kohn and Luttinger continues to provide valuable insight to several band structure features…

cond-mat.mes-hall2014★ 1 cited

Atomistic and continuum modeling of a zincblende quantum dot heterostructure

Parijat Sengupta, Sunhee Lee, Sebastian Steiger +2

A multiscale approach was adopted for the calculation of confined states in self-assembled semiconductor quantum dots (QDs). While results close to experimental data have been obta…

cond-mat.mes-hall2011★ 11 cited

Feasibility, Accuracy and Performance of Contact Block Reduction method for multi-band simulations of ballistic quantum transport

Hoon Ryu, Hong-Hyun Park, Mincheol Shin +2

Numerical utilities of the Contact Block Reduction (CBR) method in evaluating the retarded Green's function, are discussed for 3-D multi-band open systems that are represented by t…

cond-mat.mtrl-sci2010★ 33 cited

Experimental and Theoretical Study of Polarization-dependent Optical Transitions from InAs Quantum Dots at Telecommunication-Wavelengths (1.3-1.5μm)

Muhammad Usman, Susannah Heck, Edmund Clarke +4

The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavele…