M. Usman

activity

20082021

most citedTight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs

212 citations · 899 across the 38 of their papers we have counts for

collaborators

Showing 2017 · cond-mat.mtrl-sciShow all

3 papers · 2 filters

cond-mat.mtrl-sci2017★ 18 cited

Impact of disorder on the optoelectronic properties of GaN $_{y}$ As $_{1 - x - y}$ Bi $_{x}$ alloys and heterostructures

Muhammad Usman, Christopher A. Broderick, Eoin P. O'Reilly

We perform a systematic theoretical analysis of the nature and importance of alloy disorder effects on the electronic and optical properties of GaN $_{y}$ As $_{1 - x - y}$ Bi $_{x}$ alloys…

cond-mat.mtrl-sci2017★ 10 cited

Large-scale atomistic simulations demonstrate dominant alloy disorder effects in GaBi $_{x}$ As $_{1 - x}$ /GaAs multiple quantum wells

Muhammad Usman

Bismide semiconductor materials and heterostructures are considered a promising candidate for the design and implementation of photonic, thermoelectric, photovoltaic, and spintroni…

cond-mat.mtrl-sci2017★ 7 cited

Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon

M. Usman, B. Voisin, J. Salfi +2

Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical metho…

Impact of disorder on the optoelectronic properties of GaNy​As1−x−y​Bix​ alloys and heterostructures

Large-scale atomistic simulations demonstrate dominant alloy disorder effects in GaBix​As1−x​/GaAs multiple quantum wells

Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon

Impact of disorder on the optoelectronic properties of GaN $_{y}$ As $_{1 - x - y}$ Bi $_{x}$ alloys and heterostructures

Large-scale atomistic simulations demonstrate dominant alloy disorder effects in GaBi $_{x}$ As $_{1 - x}$ /GaAs multiple quantum wells