68 citations · 165 across the 4 of their papers we have counts for
4 papers
Investigation of Gd3N@C2n (40 < n < 44) family by Raman and inelastic electron tunneling spectroscopy
Brian G. Burke, Jack Chan, Keith A. Williams +7
The structure and vibrational spectrum of Gd3N@C80 is studied through Raman and inelastic electron tunneling spectroscopy (IETS) as well as density functional theory (DFT) and univ…
Raman study of Fano interference in p-type doped silicon
Brian G. Burke, Jack Chan, Keith A. Williams +3
As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The ef…
Reversal of current blockade through multiple trap correlations
Jack Chan, Brian Burke, Kenneth Evans +5
Current noise in electronic devices usually arises from uncorrelated charging events, with individual transitions resolved only at low temperatures. However, in 1-D nanotube-based…
Raman Spectroscopic Investigation of H2, HD, and D2 Physisorption on Ropes of Single-Walled, Carbon Nanotubes
Keith A. Williams, Bhabendra K. Pradhan, Peter C. Eklund +2
We have observed the S- and Q-branch Raman spectra of H2, HD, and D2 adsorbed at 85K and pressures up to 8 atm on single-walled, carbon nanotubes (SWNT). Comparative data for H2 on…