Synthesis of Group-IV ternary and binary semiconductors using epitaxy of $\mathrm{Ge}{\mathrm{H}}_3\mathrm{Cl}$ and $\mathrm{Sn}{\mathrm{H}}_4$

Aixin Zhang, Dhruve A. Ringuala, Matthew A. Mircovich +3

${\mathrm{Ge}}_{1-\mathrm{x}-\mathrm{y}}\mathrm{S}{\mathrm{i}}_{\mathrm{x}}\mathrm{S}{\mathrm{n}}_{\mathrm{y}}$ alloys were grown on Ge buffer layers at ultra-low temperature using reactions of $\mathrm{Sn}{\mathrm{H}}_4$ and $\mathrm{Ge}{\mathrm{H}}_3\mathrm{Cl}$ for the first time. The latter is…