62 citations · 62 across the 3 of their papers we have counts for
3 papers
A new spin-functional MOSFET based on magnetic tunnel junction technology: pseudo-spin-MOSFET
Yusuke Shuto, Ryosho Nakane, Wenhong Wang +5
We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunne…
Nonvolatile SRAM architecture using MOSFET-based spin-transistors
Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara
The authors proposed and computationally analyzed nonvolatile static random access memory (NV-SRAM) architecture using metal-oxide-semiconductor field-effect transistor (MOSFET) ty…
Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture
Shuu'ichirou Yamamoto, Satoshi Sugahara
We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magn…