activity
20142024
most citedUniversal radiation tolerant semiconductor

107 citations · 225 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2024★ 21 cited

Phase glides and self-organization of atomically abrupt interfaces out of stochastic disorder in -GaO

Alexander Azarov, Javier García Fernández, Junlei Zhao +6

Disorder-induced ordering and unprecedentedly high radiation tolerance in -phase of gallium oxide is a recent spectacular discovery at the intersection of the fundamental physic…

cond-mat.mtrl-sci2023★ 107 cited

Universal radiation tolerant semiconductor

Alexander Azarov, Javier García Fernández, Junlei Zhao +10

Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluen…

cond-mat.mtrl-sci2022★ 27 cited

Interplay of the disorder and strain in gallium oxide

Alexander Azarov, Vishnukanthan Venkatachalapathy, Platon Karaseov +4

Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga2O3) which is a promising ultra-wide bandgap semiconductor exhibitin…

cond-mat.mtrl-sci2021★ 70 cited

Disorder-induced ordering in gallium oxide polymorphs

Alexander Azarov, Calliope Bazioti, Vishnukanthan Venkatachalapathy +3

Polymorphs are common in nature and can be stabilized by applying external pressure in materials. The pressure/strain can also be induced by the gradually accumulated radiation dis…

cond-mat.mes-hall2014

Germanium-based quantum emitters for time-reordering entanglement scheme with degenerate exciton and biexciton states

Nicola Dotti, Francesco Sarti, Sergio Bietti +7

We address the photoluminescence emission of individual germanium extrinsic centers in Al_0.3Ga0.7As epilayers grown on germanium substrates. Through a thorough analysis of micro-p…