activity
20092025
most citedObservation of the anomalous Nernst effect in altermagnetic candidate Mn5Si3

37 citations · 72 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2025

Direct demonstration of time-reversal-symmetry-breaking spin injection from a compensated magnet

Jone Mencos, Antonin Badura, Eoin Dolan +21

The injection, propagation and detection of spin currents are essential physical processes in spintronics. So far, the separation of charge and spin currents was facilitated by the…

cond-mat.mtrl-sci2024

Epitaxial growth and magnetic properties of Mn5(SixGe1-x)3 thin films

Sueyeong Kang, Matthieu Petit, Vasile Heresanu +6

Structural and magnetic properties of Mn5(SixGe1-x)3 thin films were investigated. Ferromagnetic Mn5Ge3 and anti-ferromagnetic Mn5Si3 thin films have been synthesized and character…

cond-mat.mtrl-sci2024★ 37 cited

Observation of the anomalous Nernst effect in altermagnetic candidate Mn5Si3

Antonin Badura, Warlley H. Campos, Venkata K. Bharadwaj +20

The anomalous Nernst effect generates transverse voltage to the applied thermal gradient in magnetically ordered systems. The effect was previously considered excluded in compensat…

cond-mat.mtrl-sci2016★ 18 cited

Ferromagnetic resonance and magnetic damping in C-doped Mn5Ge3

C-E Dutoit, V. O. Dolocan, M. D. Kuz'min +5

Ferromagnetic resonance (FMR) was used to investigate the static and dynamic magnetic properties of carbon-doped Mn5Ge3 (C and C) thin films grown on Ge(111). The t…

cond-mat.mtrl-sci2009★ 7 cited

Nitridation of InP(1 0 0) surface studied by synchrotron radiation

Matthieu Petit, David Baca, S. Arabasz +7

The nitridation of InP(1 0 0) surfaces has been studied using synchrotron radiation photoemission. The samples were chemically cleaned and then ion bombarded, which cleaned the sur…

cond-mat.mtrl-sci2009★ 10 cited

First stages of the InP(1 0 0) surfaces nitridation studied by AES, EELS and EPES

M. Petit, Yamina Andre Ould-Metidji, Christine Robert-Goumet +3

The nitrides of group III metals: AlN, GaN and InN are very important materials due to their applications for short wavelength opto-electronics (light-emitting diodes and laser dio…