activity
20222024
most citedPlateau regions for zero-bias peaks within 5% of the quantized conductance value

57 citations · 105 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2024

Coulomb blockade in open superconducting islands on InAs nanowires

Huading Song, Zhaoyu Wang, Dong Pan +8

Electrons in closed systems can exhibit Coulomb blockade (CB) oscillations due to charge quantization. Here, we report CB oscillations in aluminum superconducting islands on InAs n…

cond-mat.mes-hall2023★ 11 cited

Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions

Shili Yan, Haitian Su, Dong Pan +8

High-quality free-standing InAs nanosheets are emerging layered semiconductor materials with potentials in designing planar Josephson junction devices for novel physics studies due…

cond-mat.mes-hall2023★ 22 cited

Gatemon qubit based on a thin InAs-Al hybrid nanowire

Jierong Huo, Zezhou Xia, Zonglin Li +12

We study a gate-tunable superconducting qubit (gatemon) based on a thin InAs-Al hybrid nanowire. Using a gate voltage to control its Josephson energy, the gatemon can reach the str…

cond-mat.mes-hall2022★ 3 cited

In situ tuning of dynamical Coulomb blockade on Andreev bound states in hybrid nanowire devices

Shan Zhang, Zhichuan Wang, Dong Pan +14

Electron interactions in quantum devices can exhibit intriguing phenomena. One example is assembling an electronic device in series with an on-chip resistor. The quantum laws of el…

cond-mat.mes-hall2022★ 57 cited

Plateau regions for zero-bias peaks within 5% of the quantized conductance value

Zhaoyu Wang, Huading Song, Dong Pan +13

Probing an isolated Majorana zero mode is predicted to reveal a tunneling conductance quantized at at zero temperature. Experimentally, a zero-bias peak (ZBP) is expected…

cond-mat.mes-hall2022★ 12 cited

Large Andreev bound state zero bias peaks in a weakly dissipative environment

Zhichuan Wang, Shan Zhang, Dong Pan +14

We study Andreev bound states in hybrid InAs-Al nanowire devices. The energy of these states can be tuned to zero by gate voltage or magnetic field, revealing large zero bias peaks…