6 citations · 7 across the 2 of their papers we have counts for
2 papers
quant-ph2024★ 1 cited
Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature
Timo Steidl, Pierre Kuna, Erik Hesselmeier-Hüttmann +10
Nanoelectrical and photonic integration of quantum optical components is crucial for scalable solid-state quantum technologies. Silicon carbide stands out as a material with mature…
physics.app-ph2024★ 6 cited
Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs
Maximilian W. Feil, Magdalena Weger, Hans Reisinger +10
Fully-processed SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) emit light during switching of the gate terminal, while both drain and source terminals are g…