5 papers · 1 filter
Computational Design of Two-Dimensional MoSiN Family Field-Effect Transistor for Future à ngström-Scale CMOS Technology Nodes
Che Chen Tho, Zongmeng Yang, Shibo Fang +9
Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angström-scale technology nodes is expected to involve alternative semiconductor channel mate…
Pressure-Driven Metallicity in à ngström-Thickness 2D Bismuth and Layer-Selective Ohmic Contact to MoS2
Shuhua Wang, Shibo Fang, Qiang Li +8
Recent fabrication of two-dimensional (2D) metallic bismuth (Bi) via van der Waals (vdW) squeezing method opens a new avenue to ultrascaling metallic materials into the Ã¥ngström-…
Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics
Dasari Venkatakrishnarao, Abhishek Mishra, Yaoju Tarn +11
Two-dimensional van der Waals semiconductors are promising for future nanoelectronics. However, integrating high-k gate dielectrics for device applications is challenging as the in…
Toward Phonon-Limited Transport in Two-Dimensional Electronics by Oxygen-Free Fabrication
Subhrajit Mukherjee, Shuhua Wang, Dasari Venkatakrishnarao +14
Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but…
Ab Initio Device-Driven Screening of Sub-1-nm Thickness Oxide Semiconductors for Future CMOS Technology Nodes
Linqiang Xu, Yue Hu, Lianqiang Xu +6
Ultrathin oxide semiconductors with sub-1-nm thickness are promising building blocks for ultrascaled field-effect transistor (FET) applications due to their resilience against shor…