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Alain Ranguis

1 paper hereh-index 28 citations2 works total

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  • middle author1

Across the 1 of 1 paper where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci1

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most citedGrowth mechanisms of GaN/GaAs nanostructures by droplet epitaxy explained by complementary experiments and simulations

2 citations · 2 across the 1 of their papers we have counts for

collaborators

1 paper

cond-mat.mtrl-sci2024★ 2 cited

Growth mechanisms of GaN/GaAs nanostructures by droplet epitaxy explained by complementary experiments and simulations

Guy Tsamo, Alla G. Nastovjak, Nataliya L. Shwartz +9

In this work, we present conception and study of gallium nitride (GaN) nanostructures on a gallium arsenide (GaAs) substrate with (111)A orientation. The nanostructures were design…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.