24 citations · 37 across the 7 of their papers we have counts for
7 papers
On the miscibility gap of Cu-Ni system
Yusuke Iguchi, Gabor Katona, Csaba Cserhati +2
The existence of the miscibility gap in the Cu-Ni system has been an issue in both computational and experimental discussions for half a century [Chakrabarti et al., Phase diagrams…
Transition from anomalous kinetics towards Fickian diffusion for Si dissolution into amorphous Ge
Z. Balogh, Z. Erdelyi, D. L. Beke +7
Over the last years several experimental and theoretical studies of diffusion kinetics on the nanoscale have shown that the time evolution differs from the classical Fickian law (k…
Pattern formation in SiSb system
A. Csik, G. Erdelyi, G. A. Langer +4
Thermal annealing of Si/Si1-xSbx/Si amorphous thin film tri-layer samples (x=18 and 24 at%Sb) under 100 bar Ar pressure results in an interesting pattern formation. In pictures, ta…
Investigation of Sb diffusion in amorphous silicon
A. Csik, G. A. Langer, G. Erdelyi +3
Amorphous silicon materials and its alloys become extensively used in some technical applications involving large area of the microelectronic and optoelectronic devices. However, t…
Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments
C. Frigeri, M. Serenyi, A. Csik +3
A study is presented of the structural changes occurring as a function of the annealing conditions in hydrogenated amorphous Si/Ge multilayers prepared by sputtering. Annealing cha…
AFM and TEM study of hydrogenated sputtered Si/Ge multilayers
C. Frigeri, L. Nasi, M. Serenyi +3
Multilayers of hydrogenated ultrathin (3 nm) amorphous a-Si and a-Ge layers prepared by sputtering have been studied by atomic force microscopy (AFM) and transmission electron micr…