41 citations · 41 across the 2 of their papers we have counts for
2 papers
physics.app-ph2024
In-situ Study of Understanding the Resistive Switching Mechanisms of Nitride-based Memristor Devices
Di Zhang, Rohan Dhall, Matthew M. Schneider +13
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage…
physics.app-ph2022★ 41 cited
A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/μm Drain Current
Zhuocheng Zhang, Zehao Lin, Pai-Ying Liao +12
In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process.…