2 papers
cond-mat.mes-hall2026
Gate induced strain on a two-dimensional hole gas in silicon
D. van der Bovenkamp, C. S. A. Müller, B. D. Pantiru +7
We show the effect of gate-induced strain on the valence band of a silicon (Si) metal oxide semiconductor (MOS) confined two-dimensional hole gas (2DHG). Increasing aluminum gate t…
cond-mat.mes-hall2025
Automated tuning and characterization of single-electron and single-hole transistor charge sensors
Benjamin Van Osch, Andrija Paurevic, Ali Sakr +5
We present an automated protocol for tuning single-electron transistors (SETs) and single-hole transistors (SHTs) to operate as high-sensitivity DC charge sensors. The protocol ini…