4 papers
Localization Contrast As a Fundamental Limit of Radiative Quantum Efficiency
Arsineh Apelian, Tanay Tak, Xuance Jiang +3
Disorder can localize valence- and conduction-band states to different degrees, yet whether such localization contrast has observable consequences remains poorly understood. Here,…
Understanding Ideality Factor in Wide-Band Gap Semiconductor Devices with Strong Recombination Planes
Iris Celupica-Liu, Tanay Tak, Yuh-Renn Wu +1
Ideality factor of a diode will depend on the location of the plane of maximum recombination within the diode's depletion region. It will have a minimum of one, but can range up to…
Reversible Modulation of Thermal Conductivity in GaN through Strain-Field Screening around Dislocations
Shantal Adajian, Fanghao Zhang, Andrew Christison +9
Crystalline defects are generally regarded as static phonon scatterers that irreversibly suppress thermal transport. Here we show that elastic strain can reversibly modify dislocat…
Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces
Mylène Sauty, Jean-Philippe Banon, Nicolas M. S. Lopes +4
The electron density of states in the open quantum well formed by the downward band bending region at the surface of cesiated p-type GaN is investigated. We theoretically predict t…