4 papers
Radiation effects on surface and bulk properties of ATLAS18 silicon sensors under low- and high-dose gamma irradiation and annealing
Marcela Mikestikova, Vitaliy Fadeyev, Pavla Federicova +10
Silicon strip detectors for the ATLAS Inner Tracker (ITk) at the HL-LHC must withstand harsh radiation conditions, including fluences of up to 1.6E15 1 MeV n/cm and to…
Effects of irradiation by protons, neutrons, and gamma particles on electrical properties of 4H-SiC diodes and LGAD sensors
Jiří Kroll, Pavla Federičová, Jan Chochol +15
4H-SiC is a wide-bandgap semiconductor with high displacement threshold energy, large critical electric field, and low intrinsic carrier concentration, making it attractive for rad…
Development of Segmented 4H-SiC LGADs
Vojtěch Kráčmar, Jan Chochol, Adam Klimsza +11
The wide-bandgap semiconductor 4H-silicon carbide (4H-SiC) offers a compelling combination of radiation hardness, thermal stability, and high critical electric field for particle d…
Low dose gamma irradiation study of ATLAS ITk MD8 diodes
M. Mikeštíková, V. Fadeyev, P. Federičová +8
Silicon strip detectors developed for the Inner Tracker (ITk) of the ATLAS experiment will operate in a harsh radiation environment of the HL-LHC accelerator. The ITk is thus desig…