most cited3D Atomic-Scale Metrology of Strain Relaxation and Roughness in Gate-All-Around (GAA) Transistors via Electron Ptychography

8 citations · 8 across the 1 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

2 papers · 1 filter

cond-mat.mtrl-sci2026

Hereditary Effective Atom Theory for Large-Scale Atomic Structure Prediction

Justin Tahmassebpur, Chia-Hao Lee, Cristóbal Méndez +6

Predicting the atomic structure of large systems requires simultaneous exploration of atomic positions, species, and, generally, the number of atoms. The combinatorial growth of po…

cond-mat.mtrl-sci2025★ 8 cited

3D Atomic-Scale Metrology of Strain Relaxation and Roughness in Gate-All-Around (GAA) Transistors via Electron Ptychography

Shake Karapetyan, Steven E. Zeltmann, Glen Wilk +3

To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm re…