11 citations · 17 across the 5 of their papers we have counts for
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Heteroepitaxial Growth of PbSe on InP Substrates via Lattice-Matched III-V Buffer Layers
Biridiana Rodriguez, Mark Martino, Brody Yeung +2
Detector cost remains a barrier to the widespread adoption of mid-wave infrared (3-5 micron) technology. PbSe, an inexpensive narrow band gap IV-VI semiconductor that has been used…
Mid-infrared LEDs based on lattice-mismatched hybrid IV-VI/III-V heterojunctions
Jarod E. Meyer, Biridiana Rodriguez, Leland Nordin +1
Light-emitting diodes (LEDs) can bridge the gap between narrow linewidth, expensive lasers and broadband, inefficient thermal globars for low-cost chemical sensing in the mid-infra…
Heteroepitaxial growth of highly anisotropic films on GaAs
Kelly Xiao, Virat Tara, Pooja D. Reddy +6
The epitaxial integration of anisotropic materials with mainstream cubic semiconductors opens new routes to advanced electronic and photonic devices with directional properties. In…
Epitaxial PbGeSe thin films and their photoluminescence in the mid-wave infrared
Kelly Xiao, Bryce Wong, Jarod Meyer +2
PbSe is a narrow bandgap IV-VI compound semiconductor with application in mid-wave infrared optoelectronics, thermoelectrics, and quantum devices. Alkaline earth or rare earth elem…
Expanded stability of layered SnSe-PbSe alloys and evidence of displacive phase transformation from rocksalt in heteroepitaxial thin films
Pooja D. Reddy, Leland Nordin, Lillian Hughes +2
Bulk PbSnSe has a two-phase region or miscibility gap as the crystal changes from a Van der Waals-bonded orthorhombic 2D layered structure in SnSe-rich compositions to the related…