Evan M. Anderson

most citedFirst principles band structure of interacting phosphorus and boron/aluminum

δ

-doped layers in silicon

1 citations · 1 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2026

No band gap, no problem: Defects in InAs using a band-avoiding occupation-constrained density functional theory

Peter A. Schultz, Arthur H. Edwards, Evan M. Anderson +2

Density functional theory (DFT) underestimates the experimental band gap---the infamous band gap problem. As the band gap defines the energy scale of defect levels, this complicate…

cond-mat.mtrl-sci2025★ 1 cited

First principles band structure of interacting phosphorus and boron/aluminum $δ$ -doped layers in silicon

Quinn T. Campbell, Andrew D. Baczewski, Shashank Misra +1

Silicon can be heavily doped with phosphorus in a single atomic layer (a $δ$ layer), significantly altering the electronic structure of the conduction bands within the material. Re…

No band gap, no problem: Defects in InAs using a band-avoiding occupation-constrained density functional theory

First principles band structure of interacting phosphorus and boron/aluminum δ-doped layers in silicon

First principles band structure of interacting phosphorus and boron/aluminum $δ$ -doped layers in silicon