1 citations · 1 across the 2 of their papers we have counts for
3 papers
Revealing Detailed Transport Mechanisms in Silicon Tunneling Diodes
Juan P. Mendez, Xujiao Gao, Sungjae Hong +3
Understanding carrier transport in heavily doped semiconductor junctions is essential for developing next-generation tunneling devices for cryogenic electronics and steep-slope tec…
No band gap, no problem: Defects in InAs using a band-avoiding occupation-constrained density functional theory
Peter A. Schultz, Arthur H. Edwards, Evan M. Anderson +2
Density functional theory (DFT) underestimates the experimental band gap---the infamous band gap problem. As the band gap defines the energy scale of defect levels, this complicate…
First principles band structure of interacting phosphorus and boron/aluminum -doped layers in silicon
Quinn T. Campbell, Andrew D. Baczewski, Shashank Misra +1
Silicon can be heavily doped with phosphorus in a single atomic layer (a layer), significantly altering the electronic structure of the conduction bands within the material. Re…