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Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
T. J. B. M. Janssen, A. Tzalenchuk, R. Yakimova +4
We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacit…
Sublattice ordering in a dilute ensemble of defects in graphene
V. V. Cheainov, O. Syljuasen, B. L. Altshuler +1
Defects in graphene, such as vacancies or adsorbents attaching themselves to carbons, may preferentially take positions on one of its two sublattices, thus breaking the global latt…
Spectral features due to inter-Landau-level transitions in the Raman spectrum of bilayer graphene
M. Mucha-Kruczynski, O. Kashuba, V. I. Fal'ko
We investigate the contribution of the low-energy electronic excitations towards the Raman spectrum of bilayer graphene for the incoming photon energy Omega >> 1eV. Starting with t…