4 papers
Individual Characterization of Fast-Responding Trap States at the NO-Annealed SiO/4H-SiC Interface
Takahiro Ono, Mizuki Ohashi, Tomohiro Shigeno +4
Fast-responding trap states introduced by NO-annealing are suspected to limit the channel mobility of 4H-SiC MOSFETs, yet their microscopic characterization remains challenging bec…
Force-Based Reading and Writing of Individual Single-Atom Magnets
Yuuki Adachi, Kazuki Ueda, Yuuki Yasui +1
The integration of single-atom bits enables the realization of the highest data-density memory. Reading and writing information to these bits through mechanical interactions opens…
Regional chemical potential analysis for material surfaces
Masahiro Fukuda, Masato Senami, Yoshiaki Sugimoto +1
We propose a local regional chemical potential (RCP) analysis method based on an energy window scheme to quantitatively estimate the selectivity of atomic and molecular adsorption…
Closing of the Mott gap near step edges in NiS2
Yuuki Yasui, Kota Iwata, Shota Okazaki +5
A prototypical charge-transfer type Mott insulator NiS2 pyrite exhibits a metal-insulator transition with bandwidth control. Recent discoveries on surface-specific electronic state…