3 papers
cond-mat.mtrl-sci2026
Individual Characterization of Fast-Responding Trap States at the NO-Annealed SiO/4H-SiC Interface
Takahiro Ono, Mizuki Ohashi, Tomohiro Shigeno +4
Fast-responding trap states introduced by NO-annealing are suspected to limit the channel mobility of 4H-SiC MOSFETs, yet their microscopic characterization remains challenging bec…
physics.app-ph2025
Force-Based Reading and Writing of Individual Single-Atom Magnets
Yuuki Adachi, Kazuki Ueda, Yuuki Yasui +1
The integration of single-atom bits enables the realization of the highest data-density memory. Reading and writing information to these bits through mechanical interactions opens…
cond-mat.mtrl-sci2025
Regional chemical potential analysis for material surfaces
Masahiro Fukuda, Masato Senami, Yoshiaki Sugimoto +1
We propose a local regional chemical potential (RCP) analysis method based on an energy window scheme to quantitatively estimate the selectivity of atomic and molecular adsorption…