Kingsley Egbo

activity

20232025

most citedIn-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge

15 citations · 22 across the 3 of their papers we have counts for

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3 papers · 1 filter

cond-mat.mtrl-sci2025

$β$ -Ga $_{2}$ O $_{3}$ (001) surface reconstructions from first principles and experiment

Konstantin Lion, Piero Mazzolini, Kingsley Egbo +4

We present a comprehensive investigation of reconstructions on $β$ -Ga $_{2}$ O $_{3}$ (001) combining first-principles calculations with experimental observations. Using ab initio atomisti…

cond-mat.mtrl-sci2024★ 7 cited

Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1-x)O2 during suboxide molecular beam epitaxy

Wenshan Chen, Kingsley Egbo, Joe Kler +3

Rutile GeO $_{2}$ is a promising ultra-wide bandgap semiconductor for future power electronic devices whose alloy with the wide bandgap semiconductor rutile-SnO $_{2}$ enables bandgap en…

cond-mat.mtrl-sci2023★ 15 cited

In-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge

Wenshan Chen, Kingsley Egbo, Hans Tornatzky +3

Rutile GeO2 has been predicted to be an ultra-wide bandgap semiconductor suitable for future power electronics devices while quartz-like GeO2 shows piezoelectric properties. To exp…

β-Ga2​O3​(001) surface reconstructions from first principles and experiment

Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1-x)O2 during suboxide molecular beam epitaxy

In-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge

$β$ -Ga $_{2}$ O $_{3}$ (001) surface reconstructions from first principles and experiment