Individual Characterization of Fast-Responding Trap States at the NO-Annealed SiO${}_2$/4H-SiC Interface

Takahiro Ono, Mizuki Ohashi, Tomohiro Shigeno +4

Fast-responding trap states introduced by NO-annealing are suspected to limit the channel mobility of 4H-SiC MOSFETs, yet their microscopic characterization remains challenging bec…