15 citations · 20 across the 4 of their papers we have counts for
Showing cond-mat.mtrl-sciShow all
2 papers · 1 filter
cond-mat.mtrl-sci2026
Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin
Martin Frentrup, Indraneel Sanyal, Dan Lamb +5
Thick, defect free epitaxial layers grown using industry standard techniques are a fundamental requirement for the widespread adoption of fully vertical power devices based on ultr…
cond-mat.mtrl-sci2025★ 4 cited
A cascade model for the defect-driven etching of porous GaN distributed Bragg reflectors
Ben Thornley, Maruf Sarkar, Saptarsi Ghosh +4
Fabrication of porous GaN distributed Bragg reflectors (DBRs) via the selective electrochemical etching (ECE) of conductive Si-doped layers, separated by non-intentionally doped (N…