1 citations · 1 across the 2 of their papers we have counts for
2 papers
eess.SY2025
A Modified Boost Converter Topology for Dynamic Characterization of Hot Carrier and Trap Generation in GaN HEMTs
Moshe Azoulay, Gilad Orr, Gady Golan
Modern microelectronic systems require long term operational stability, necessitating precise reliability models to predict device lifecycles and identify governing failure mechani…
physics.ins-det2021★ 1 cited
GaN HEMT based high energy particles detection preamplifier
G. Orr, M. Azoulay, G. Golan +1
GaN high electron mobility transistors (HEMT) have gained some foothold in the power electronics industry due to wide frequency bandwidth and power handling. The material offers a…