Ming Xue

most citedDefect engineering of ultrathin gallium nitride via electric fields for advanced electronic, magnetic, and gas sensing applications

1 citations · 1 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2026★ 1 cited

Defect engineering of ultrathin gallium nitride via electric fields for advanced electronic, magnetic, and gas sensing applications

Yujia Tian, Devesh R. Kripalani, Ming Xue +1

Scaling wide-band-gap semiconductors to the ultrathin limit offers a transformative pathway for power electronics, with gallium nitride (GaN) representing a cornerstone material in…

cond-mat.str-el2025

Magnetism and Correlated Electrons in LaCr $_{2}$ Ge $_{2}$ N

Jiao-Jiao Meng, Yu-Sen Xiao, Gen Li +22

We report the synthesis, structure and physical properties of a new quaternary nitride LaCr $_{2}$ Ge $_{2}$ N. The compound crystallizes in the CeCr $_{2}$ Si $_{2}$ C-type structure (P4/mmm), fe…

Defect engineering of ultrathin gallium nitride via electric fields for advanced electronic, magnetic, and gas sensing applications

Magnetism and Correlated Electrons in LaCr2​Ge2​N

Magnetism and Correlated Electrons in LaCr $_{2}$ Ge $_{2}$ N