4 papers
Si/SiGe multi-channel superlattice structure epitaxial growth with segmented temperature control for Next-Generation Logic Devices
Wenlong Yao, Zhigang Li, Guobin Bai +5
Stacking multiple SiSiGe channels in advanced logic devices faces severe thermal budget accumulation, which degrades interfaces via Ge-Si interdiffusion and strain relaxation.This…
Physics Guided Exponential Model Design of High Ge Content SiGe Selective Epitaxy for Gate All Around Source/Drain Applications
Zhigang Li, Guobin Bai, Hengwei Cui +9
High germanium content silicon germanium (SiGe) epitaxy is critical for strain engineering in advanced gate all around (GAA) transistors. This paper demonstrates a physics guided e…
Exploring the Potential of Integrated Optical Sensing and Communication (IOSAC) Systems with Si Waveguides for Future Networks
Xiangpeng Ou, Ying Qiu, Ming Luo +17
Advanced silicon photonic technologies enable integrated optical sensing and communication (IOSAC) in real time for the emerging application requirements of simultaneous sensing an…
Field-Free Deterministic Writing of SOT-MTJ by Unipolar Current
Tengzhi Yang, Meiyin Yang, Lei Zhao +6
We propose a manufacturable solution for field-free writing of perpendicular SOT-MTJ without sacrificing integration density on a 200 mm wafer. The field-free writing operation can…