3 papers
cond-mat.mtrl-sci2026
Device contacts as spin-state selectors for silicon vacancies in 4H-SiC
Aurora Teien, Maria Mendes Martins, Andreas Gottscholl +11
Optically addressable defect spins in wide band gap semiconductors are promising building blocks for scalable quantum technologies. Yet, the consequences of conventional contact sc…
cond-mat.mtrl-sci2026
Fine structure of the M-center in Si
Aurora Teien, David R. Gongora, Arnulf Johannes Snedker-Nielsen +6
Color centers in silicon offer great possibilities for scalable quantum technologies. The M-center, proposed to originate from a carbon-hydrogen complex, offers telecommunications-…
quant-ph2026
Spin-active chlorine-related centers in 4H-SiC with telecom-band emissions
Danial Shafizadeh, Misagh Ghezellou, Viktor M. Bobal +5
A photoluminescence (PL) and magnetic resonance investigation of a defect in chlorine-implanted 4H-SiC is presented. This Cl-related center emits light at telecom wavelengths with…