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cond-mat.mtrl-sci2026

Radiative electronic bound states in the continuum from defects in semiconductors

Seong Yun Hong, Liang Z. Tan, Ki Hoon Lee +2

Continuum-buried defect states in semiconductors are generally expected to be optically inactive due to their strong coupling to continuum bands. Here, we show that such defects ca…

cond-mat.mtrl-sci2026

Role of surface states and band modulations in ultrathin ruthenium interconnects

Gyungho Maeng, Subeen Lim, Mi Gyoung Lee +3

Mitigating the RC delay from transistor miniaturization is essential for next-generation devices, driving a focus on interconnect electrical performance. Current copper-based inter…

cond-mat.mtrl-sci2026

First-principles high-throughput screening of ruthenium compounds for advanced interconnects

Gyungho Maeng, Subeen Lim, Bonggeun Shong +1

As interconnect dimensions continue to shrink, the industry-standard copper faces a critical increase in resistivity, presenting a significant hurdle to overall device performance.…

cond-mat.mtrl-sci20261 cited

Cobalt Binary Compounds for Advanced Interconnect Materials

Gyungho Maeng, Yeonghun Lee

The industrial standard copper (Cu) interconnects face a substantial resistivity increase at thinner linewidths, posing a well-known challenge to limit overall device performance.…

cond-mat.mtrl-sci20262 cited

Validation of constant mean free path and relaxation time approximations for metal resistivity: explicit treatment of electron-phonon interactions

Subeen Lim, Yumi Kim, Gyungho Maeng +1

The figure of merit the product of resistivity and mean free path (MFP) evaluated from first-principles calculations, is widely adopted to screen promising interconnect meta…