2 papers
cs.AR2026
Device-Circuit Co-Design of Variation-Resilient Read and Write Drivers for Antiferromagnetic Tunnel Junction (AFMTJ) Memories
Yousuf Choudhary, Tosiron Adegbija
Antiferromagnetic Tunnel Junctions (AFMTJs) offer picosecond switching and high integration density for in-memory computing, but their ultrafast dynamics and low tunnel magnetoresi…
cs.AR2026
Antiferromagnetic Tunnel Junctions (AFMTJs) for In-Memory Computing: Modeling and Case Study
Yousuf Choudhary, Tosiron Adegbija
Antiferromagnetic Tunnel Junctions (AFMTJs) enable picosecond switching and femtojoule writes through ultrafast sublattice dynamics. We present the first end-to-end AFMTJ simulatio…