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20012024
most citedProbing impulsive strain propagation with x-ray pulses

175 citations · 442 across the 25 of their papers we have counts for

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12 papers · 1 filter

cond-mat.mtrl-sci2024★ 13 cited

Shock-driven amorphization and melt in FeO

Céline Crépisson, Alexis Amouretti, Marion Harmand +28

We present measurements on FeO amorphization and melt under laser-driven shock compression up to 209(10) GPa via time-resolved in situ x-ray diffraction. At 122(3) GPa, a d…

cond-mat.mtrl-sci2024★ 6 cited

Phase transitions of FeO under laser shock compression

A. Amouretti, C. Crépisson, S. Azadi +22

We present in-situ x-ray diffraction and velocity measurements of FeO under laser shock compression at pressures between 38-116 GPa. None of the phases reported by static c…

cond-mat.mtrl-sci2024

Resonant inelastic x-ray scattering in warm-dense Fe compounds beyond the SASE FEL resolution limit

Alessandro Forte, Thomas Gawne, Karim K. Alaa El-Din +19

Resonant inelastic x-ray scattering (RIXS) is a widely used spectroscopic technique, providing access to the electronic structure and dynamics of atoms, molecules, and solids. Howe…

cond-mat.mtrl-sci2022

Slip competition and rotation suppression in tantalum and copper during dynamic uniaxial compression

Patrick G. Heighway, Justin S. Wark

When compressed, a metallic specimen will generally experience changes to its crystallographic texture due to plasticity-induced rotation. Ultrafast x-ray diffraction techniques ma…

cond-mat.mtrl-sci2021★ 1 cited

Crystal plasticity finite element simulation of lattice rotation and x-ray diffraction during laser shock-compression of Tantalum

P. Avraam, D. McGonegle, P. G. Heighway +7

Wehrenberg et. al. [Nature 550 496 (2017)] used ultrafast in situ x-ray diffraction at the LCLS x-ray free-electron laser facility to measure large lattice rotations resulting from…

cond-mat.mtrl-sci2021★ 29 cited

Atomistic deformation mechanism of silicon under laser-driven shock compression

S. Pandolfi, S. Brennan Brown, P. G. Stubley +10

Silicon (Si) is one of the most abundant elements on Earth, and it is the most important and widely used semiconductor, constituting the basis of modern electronic devices. Despite…