39 citations · 39 across the 2 of their papers we have counts for
5 papers
Hydrostatic Pressure-enhanced correlated magnetism and Chern insulator in moir'e WSe2
Pengfei Jiao, Chenghao Qian, Ning Mao +24
Moiré semiconductors offer flat bands where Coulomb interactions and band topology intertwine, while interlayer coupling plays a central role in forming the moiré potential. Howeve…
Tunable ferromagnetism at non-integer filling of a moiré superlattice
Guorui Chen, Aaron L. Sharpe, Eli J. Fox +12
The flat bands resulting from moiré superlattices in magic-angle twisted bilayer graphene (MATBG) and ABC-trilayer graphene aligned with hexagonal boron nitride (ABC-TLG/hBN) have…
Emergence of Tertiary Dirac Points in Graphene Moiré Superlattices
Guorui Chen, Mengqiao Sui, Duoming Wang +10
The electronic structure of a crystalline solid is largely determined by its lattice structure. Recent advances in van der Waals solids, artificial crystals with controlled stackin…
Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors
Zuocheng Zhang, Likai Li, Jason Horng +10
Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material.…
Second generation Dirac cones and inversion symmetry breaking induced gaps in graphene/hexagonal boron nitride
Eryin Wang, Xiaobo Lu, Shijie Ding +12
Graphene/h-BN has emerged as a model van der Waals heterostructure, and the band structure engineering by the superlattice potential has led to various novel quantum phenomena incl…