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20092023
most citedHigh-Precision Tuning of State for Memristive Devices by Adaptable Variation-Tolerant Algorithm

504 citations · 1.7k across the 31 of their papers we have counts for

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10 papers · 1 filter

physics.app-ph2021

Multi-terminal memristive devices enabling tunable synaptic plasticity in neuromorphic hardware: a mini-review

Yann Beilliard, Fabien Alibart

Neuromorphic computing based on spiking neural networks has the potential to significantly improve on-line learning capabilities and energy efficiency of artificial intelligence, s…

physics.app-ph2020★ 1 cited

Oxygen vacancy engineering of TaOx-based resistive memories by Zr doping for improved variability and synaptic behavior

Joao H. Quintino Palhares, Yann Beilliard, Fabien Alibart +5

Resistive switching devices are promising emerging non-volatile memories. However, one of the biggest challenges for resistive switching (RS) memory applications is the device-to-d…

physics.app-ph2020★ 9 cited

Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories

Yann Beilliard, François Paquette, Frédéric Brousseau +3

This study demonstrates multilevel switching at 1.5 K of Al2O3/TiO2-x resistive memory devices fabricated with CMOS-compatible processes and materials. The I-V characteristics exhi…

physics.app-ph2019★ 28 cited

Observation of Highly Nonlinear Resistive Switching of Al2O3/TiO2-x Memristors at Cryogenic Temperature (1.5 K)

Yann Beilliard, François Paquette, Frédéric Brousseau +3

In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K…

physics.app-ph2019★ 12 cited

Physical mechanisms involved in the formation and operation of memory devices based on a monolayer of gold nanoparticles-polythiophene hybrid materials

T. Zhang, D. Guérin, F. Alibart +10

Understanding the physical and chemical mechanisms occurring during the forming process and operation of an organic resistive memory device is a major issue for better performances…

physics.app-ph2018★ 48 cited

Perspective: Organic electronic materials and devices for neuromorphic engineering

Sebastien Pecqueur, Dominique Vuillaume, Fabien Alibart

Neuromorphic computing and engineering has been the focus of intense research efforts that have been intensified recently by the mutation of Information and Communication Technolog…

physics.app-ph2018★ 27 cited

Light-stimulable molecules/nanoparticles networks for switchable logical functions and reservoir computing

Y. Viero, D. Guerin, A. Vladyka +4

We report the fabrication and electron transport properties of nanoparticles self-assembled networks (NPSAN) of molecular switches (azobenzene derivatives) interconnected by Au nan…

physics.app-ph2018★ 65 cited

Neuromorphic Time-Dependent Pattern Classification with Organic Electrochemical Transistor Arrays

Sebastien Pecqueur, Maurizio Mastropasqua Talamo, David Guerin +4

Based on bottom-up assembly of highly variable neural cells units, the nervous system can reach unequalled level of performances with respect to standard materials and devices used…

physics.app-ph2018★ 38 cited

Cation Discrimination in Organic Electrochemical Transistors by Dual Frequency Sensing

Sebastien Pecqueur, David Guerin, Dominique Vuillaume +1

In this work, we propose a strategy to sense quantitatively and specifically cations, out of a single organic electrochemical transistor (OECT) device exposed to an electrolyte. Fr…

physics.app-ph2017★ 2 cited

Concentric-electrode organic electrochemical transistors: case study for selective hydrazine sensing

S Pecqueur, S Lenfant, D Guerin +2

We report on hydrazine-sensing organic electrochemical transistors (OECTs) with a design consisting in concentric annular electrodes. The design engineering of these OECTs was moti…