272 citations · 1.3k across the 28 of their papers we have counts for
28 papers
Fully epitaxial fcc(111) magnetic tunnel junctions with a Co90Fe10/MgAlO/Co90Fe10 structure
Jieyuan Song, Thomas Scheike, Cong He +5
Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such as Fe(001)/MgO(001)/Fe(001), have been widely used as the core of various spintronic devices such as magnetoresi…
Multi-level recording in dual-layer FePt-C granular film for heat-assisted magnetic recording
P. Tozman, S. Isogami, I. Suzuki +11
Multi-level magnetic recording is a new concept for increasing the data storage capacity of hard disk drives. However, its implementation has been limited by a lack of suitable med…
Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface
Y. Fujita, Y. Miura, T. Sasaki +3
We study spin-scattering asymmetry at the interface of two ferromagnets (FMs) based on a half-metallic CoFeMnSi (CFMS)/CoFe interface. First-principles ballis…
Structural insight using anomalous XRD into Mn2CoAl Heusler alloy films grown by magnetron sputtering, IBAS and MBE techniques
Hiroo Tajiri, Loku Singgappulige Rosantha Kumara, Yuya Sakuraba +8
Inverse Heusler alloy Mn2CoAl thin films, known as a spin-gapless semiconductor (SGS), grown by three different methods: ultra-high vacuum magnetron spattering, Ar-ion beam assiste…
Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions
Thomas Scheike, Qingyi Xiang, Zhenchao Wen +4
Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunn…
Voltage-controlled magnetic anisotropy under the electronic structure modulation in quantum wells
Qingyi Xiang, Yoshio Miura, Muftah Al-Mahdawi +8
Voltage-controlled magnetic anisotropy (VCMA) offers an emerging approach to realize energy-efficient magnetization switching in spintronic devices such as magnetic random access m…