activity
20082026
most citedFilm structure of epitaxial graphene oxide on SiC: Insight on the relationship between interlayer spacing, water content, and intralayer structure

20 citations · 20 across the 2 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2026

Interfacial properties of MoS2 thin films grown on functional substrates

Hafiz Sami Ur Rehman, Nunzia Coppola, Alice Galdi +8

Interface chemistry and defect formation in MoS2 thin films grown on single crystal substrates critically determine the electronic structure of MoS2 and thus can strongly modify ma…

cond-mat.mtrl-sci2026

Substrate induced optimization of the Electrocatalytic Hydrogen Evolution Reaction (HER) performances of MoS2 thin film

Hafiz Sami-Ur-Rehman, Arpana Singh, Nunzia Coppola +11

Molybdenum disulfide (MoS2) has emerged as a promising, cost-effective catalyst for hydrogen production via water splitting. We investigate the structural and electrocatalytic prop…

cond-mat.mtrl-sci2014★ 20 cited

Film structure of epitaxial graphene oxide on SiC: Insight on the relationship between interlayer spacing, water content, and intralayer structure

S. Zhou, S. Kim, E. Di Gennaro +9

Chemical oxidation of multilayer graphene grown on silicon carbide yields films exhibiting reproducible characteristics, lateral uniformity, smoothness over large areas, and manage…

cond-mat.mtrl-sci2009

Organic film thickness influence on the bias stress instability in Sexithiophene Field Effect Transistors

F. V. Di Girolamo, C. Aruta, M. Barra +2

In this paper, the dynamics of bias stress phenomenon in Sexithiophene (T6) Field Effect Transistors (FETs) has been investigated. T6 FETs have been fabricated by vacuum depositing…

cond-mat.mtrl-sci2008

Improved structural ordering in sexithiophene thick films grown on single crystal oxide substrates

Carmela Aruta, Pasquale D'Angelo, Mario Barra +2

We report on sexithiophene films, about 150nm thick, grown by thermal evaporation on single crystal oxides and, as comparison, on Si/SiO2. By heating the entire deposition chamber…