13 citations · 27 across the 3 of their papers we have counts for
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cond-mat.other2007★ 12 cited
High-temperature PbTe diodes
Z. Dashevsky, V. Kasiyan, E. Mogilko +5
We describe the preparation of high-temperature PbTe diodes. Satisfactory rectification was observed up to 180-200 K. Two types of diodes, based on a p-PbTe single crystal, were pr…
cond-mat.other2007★ 13 cited
Characterization of high-temperature PbTe p-n junctions prepared by thermal diffusion and by ion-implantation
A. V. Butenko, R. Kahatabi, E. Mogilko +6
We describe here the characteristics of two types of high-quality PbTe p-n-junctions, prepared in this work: (1) by thermal diffusion of In4Te3 gas (TDJ), and (2) by ion implantati…