11 citations · 11 across the 2 of their papers we have counts for
2 papers
physics.app-ph2026
Hot LO Phonon-Induced RF Nonlinearity in GaN High-Electron-Mobility Transistors
Ankan Ghosh Dastider, Matt Grupen, Nicholas C. Miller +1
Hot longitudinal optical (LO) phonons in GaN have recently been identified as a major factor degrading the DC performance of GaN high-electron-mobility transistors (HEMTs) by 30-60…
cond-mat.mes-hall2022★ 11 cited
A comparison of a commercial hydrodynamics TCAD solver and Fermi kinetics transport convergence for GaN HEMTs
Ashwin Tunga, Kexin Li, Nicholas C. Miller +3
Various simulations of a GaN HEMT are used to study the behaviors of two different energy-transport models: the Fermi kinetics transport model and a hydrodynamics transport model a…